MMBD4448N1SPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t switching diode array v o l t a g e 80 v o l t s c u r r e n t 250 mampere a p p l i c a t i o n f e a t u r e * h i g h s p e e d . ( t r r = 4.0 n s e c max.) * fast switching speed. c o n s t r u c t i o n * s i l i c o n e p i t a x i a l p l a n a r * fast high speed switching * ultra-small surface mount package. * for general purpose switching applications. * high conductance. electrical characteristics ( at t a = 25 o c unless otherwise noted ) maximum average reverse current (note 1 ) characteristics symbol uamps volts maximum instantaneous forward voltage maximum ratinges ( at t a = 25 o c unless otherwise noted ) ratings maximum non-repetitive peak reverse voltage maximum working peak reverse voltage maximum dc blocking voltage maximum repetitive peak reverse voltage maximum rms voltage maximum average forward rectified current peak forward surge current at 1usec. total capacitance maximum operating and storage temperaturd range maximum thermal resistance symbol v rm v rwm v dc v rrm v rms i o c t v f i r t j, t stg i fsm MMBD4448N1SPT MMBD4448N1SPT units 100 volts volts volts mamps 80 57 250 repetitive peak forward current i frm mamps 500 3.5 625 -65 to +150 amps pf maximum reverse recovery time trr 4.0 nsec o c/w o c @1sec @1.0usec v r= 20v @tj=25 o c v r= 75v @tj=150 o c v r= 25v @tj=150 o c 25na 50 30 1.0 0.72 2.0 4.0 r ja @ i f = 100 ma @ i f = 5.0 ma notes : 2006-07 1. short duration test pulse used to minimize self-hesting effect. units * small surface mounting type. (fbpt-923) 1.00.05 0.50.05 0.050.04 0.680.05 0.260.05 0.420.05 0.30.05 0.25(ref.) 0.37(ref.) dimensions in millimeters 1.00.05 fbpt-923 fbpt-923 circuit ( 3 ) ( 1 ) ( 2 )
rating characteristic curves ( mmbd4448n1s pt ) 0.1n 1n 10n 100n 1u 10u reverse current, (a) reverse voltage, (v) fig. 2 - reverse characteristics ta=125 o c 0 20 80 100 ta= -40 o c ta=75 o c ta=25 o c ta= 0 o c 60 40 0 0.5 1.0 1.5 2.0 2.5 3.0 reverse voltage, (v) 0 6 12 18 24 30 36 40 total capacitance , (pf) fig. 3 - typical junction capacitance f = 1mhz ta=125 o c 0 0 20 40 60 80 100 120 25 50 75 100 125 150 ambient temperature, ( o c ) average forward current, (%) fig. 4 - typical forward current derating curve 100u 1m 10m 100m 1 0 0.2 0.4 0.6 0.8 1.0 1.2 forward current, (a) forward voltage, (v) fig. 1 - forward characteristics 1.4 1.6 ta=25 o c ta= -40 o c ta=75 o c ta=125 o c ta=0 o c
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